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0 0.2 0.4 0.6 0.8 1 0.1 1 10 100 S40HC3 tc=125c [max] tc=125c [typ] tc= 25c [max] tc= 25c [typ] 0.2 0.5 2 5 20 50 forward voltage i f [a] forward current v f [v] pulse measurement per diode forward voltage
0 5 10 15 20 25 30 0.1 1 10 100 1000 10000 S40HC3 tc=125c [typ] tc=100c [typ] tc=75c [typ] tc=50c [typ] tc=25c [typ] pulse measurement per diode reverse voltage v r [v] i r [ma] reverse current reverse current
0 5 10 15 20 25 30 0 10203040506070 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 S40HC3 tj = 125c 0 t p i o t d=t p /t forward power dissipation p f [w] i o [a] average rectified forward current forward power dissipation
0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 S40HC3 v r [v] reverse voltage reverse power dissipation p r [w] tj = 125c 0 t p v r t d=t p /t reverse power dissipation
0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 S40HC3 derating curve i o [a] tc [c] case temperature average rectified forward current v r = 15v 0 t p i o t d=t p /t 0 v r
0 100 200 300 400 500 600 700 1 10 100 2 5 20 50 S40HC3 number of cycles [cycle] i fsm [a] peak surge forward current peak surge forward capability i fsm 10ms 10ms 1 cycle non-repetitive, sine wave, tj=25c before surge current is applied
0.1 1 10 100 1000 10000 S40HC3 0.2 0.5 2 5 30 junction capacitance junction capacitance c j [pf] reverse voltage v r [v] f=1mhz tc=25c typ per diode

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